+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
News Article

NXP reveals 50 RF/Microwave products based on SiGe:C BiCMOS

NXP to demonstrate latest RF solutions at the 2010 IEEE MTT-S International Microwave Symposium (IMS) from May 25-27 in Anaheim, California (Booth # 3324).

NXP Semiconductors 50 new products will be rolled out by the end of 2010. NXP's QUBiC4 SiGe:C process technology aims to provide cost-effective, integrated, high frequency using a silicon-based process. Their latest products are claimed to offer higher and more flexible performance than GaAs-based solutions and add more functionality onto devices with less space, competitive cost, reliability and manufacturing advantages.

The new technology is targeted towards high frequency radio applications in the wireless, broadband communications, networking, and multimedia markets and claimed to offer high power gain with an excellent dynamic range.

With more than a dozen silicon germanium based products in the market, NXP has developed and shipped more than 25 million RF products using its QUBiC4 technology showing that the SiGe:C process can deliver the performance of GaAs technology. 

"As a global leader in RF technology and component design, NXP is committed to the development of products produced with SiGe:C technology to address the fast-moving dynamics of the RF/microwave markets. We endeavor to provide cost-effective, integrated, high frequency solutions with the performance of gallium-arsenide (GaAs) technologies using a silicon-based process," said Ronald van Cleef, GM of RF Small Signal Business, NXP Semiconductors.

QUBiC4 technology speeds the migration from GaAs technology to silicon by enabling cutting-edge, low-noise performance and IP availability. NXP offers three variants of the QUBiC4 technology. These include QUBiC4X, a 0.25µm SiGe:C process introduced about 6 years ago, typically used for applications up to 30GHz and very low noise applications such as GPS and the most recent 0.25µm QUBiC4Xi SiGe:C process. This offers on Ft in excess of 200GHz, which is particularly suited for applications above 30GHz and those requiring minimum noise figure, such as VSAT and radar.

Applications for QUBiC4-based products ranges from mobile platforms, personal navigation devices, AESA radars, satellite DBS/-VSAT, e-metering, software-defined radios (SDR), base stations, point-to-point radio links, and WLAN, where high frequency and high integration levels are essential. End users can benefit from increased functionality on smaller and lighter weight mobile phones.

A dozen products are already available, including GPS Low Noise Amplifiers such as the BGU7005, Medium Power Amplifiers such as the BGA7124 and LO Generators such as the TFF1003HN.

Another 40 new products will be released in May and throughout the year, including new 6th and 7th generation wideband transistors, Low Noise Amplifiers, Medium Power Amplifiers, Variable Gain Amplifiers and LO Generators.
Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: