News Article
EPC Introduces two industry-leading eGaN FETs
Both GaN on silicon devices have many times superior switching performance compared to similar state-of-the-art silicon-based power MOSFETs. Both devices also have low on resistance and are smaller than silicon devices with similar resistance.
Efficient Power Conversion Corporation is introducing the EPC2001 and EPC2015, two lead-free, RoHS-compliant enhancement-mode GaN on silicon (eGaN) FETs.
The EPC2001 FET is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate, and the EPC2015 is a 40 VDS with a maximum RDS(ON) of 4 milliohms.
Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on resistance, are smaller than silicon devices with similar resistance and have many times superior switching performance.
Figure : Magnified die photo of EPC2015 or EPC2001 indicating the solder bar that is connected to the silicon
substrate and the decreased solder bar width.
Applications that benefit from eGaN FET performance increases include DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits and telecom base stations.
“Protection of the environment is a high priority for EPC and a driving force for offering lead-free, RoHS-compliant eGaN FETs. The EPC2001 and EPC2015 are the first lead-free and RoHS-compliant eGaN FETs to be introduced and it is our plan to have all eGaN FETs available lead-free and RoHS-compliant within the next 4 months,” said Alex Lidow, co-founder and CEO.
In 1k piece quantities, the EPC2001 is priced at $2.80 and the EPC2015 is priced at $2.48.
