News Article
Globalfoundries and imec to advance GaN on silicon technology
The program unites leading IDMs, foundries, compound semiconductor companies, equipment and substrate suppliers to develop 8 inch GaN technology on silicon.
Globalfoundries, a leading semiconductor foundry, has signed a strategic long-term partnership on sub-22nm CMOS scaling and GaN-on-silicon technology with the nanoelectronics R&D centre imec.
Globalfoundries has joined the imec GaN research program, which aims at high-performance, cost-effective GaN devices on silicon. This program brings together leading IDMs, foundries, compound semiconductor companies, equipment suppliers and substrate suppliers to develop 8 inch GaN technology on silicon.
“Partnering with Globalfoundries is very important for imec and our partners since it strengthens our collaboration with foundries and thus also the ecosystem we offer in our programs to IDMs and the fabless and fablite community,” said Luc Van den hove, President and CEO of imec.
“We expect this partnership to give a further boost to our research programs over the coming years.”
“Globalfoundries has long embraced a collaborative approach to R&D innovation based on a model of shared objectives and shared investments with partners around the world,” said David Bennett, vice president of alliances at Globalfoundries. “The mission and capabilities of imec are highly complementary to our current collaborative R&D approach and will add another important dimension to our technology pipeline.”
