News Article
GaN nanowires get into the groove
To bypass the problem of unruly nanowires, scientists deliberately cut sapphire along different crystal planes on which they grew gallium nitride nanowires. This resulted in various surface patterns including “steps” of nanometre dimensions between the different planes, as well as accordion-like, V-shaped grooves.
Growing up is not easy, especially for tiny nanowires. With no support or guidance, nanowires become unruly, making it difficult to harness their full potential as effective semiconductors.
Ernesto Joselevich of the Weizmann Institute’s Chemistry Faculty has found a way to grow semiconductor nanowires out, not up, on a surface, providing, what he says, for the first time, the much-needed guidance to produce relatively long, orderly, aligned structures.
Since semiconductors with controlled structures are at the core of the most advanced technologies, this new research will hopefully enable the production of semiconductor nanostructures with enhanced electronic and optical properties, suitable for a wide range of applications including LEDs, lasers, information storage media, transistors, computers, photovoltaics and more.
Illustration of nanowires growing along nanogrooves
David Tsivion and Mark Schvartzman of the Materials and Interfaces Department grew nanowires made of GaN using a method that usually produces vertical nanowires with excellent optical and electronic properties.
These vertical wires only become unruly once they are harvested and assembled into arrays. To bypass this problem, the scientists used sapphire as a base on which to grow the nanowires. But rather than growing them on a smooth surface, they deliberately cut the sapphire along different planes of the crystal, resulting in various surface patterns including “steps” of nanometre dimensions between the different planes, as well as accordion-like, V-shaped grooves.
Top view of the nanowires by scanning electron microscopy (SEM)
Their results show that surface steps and grooves have a strong guiding effect, coaxing the nanowires to grow horizontally along their edges or within the grooves and producing well-aligned, millimetre-long nanowire arrays. In contrast, current methods of assembling nanowires horizontally on smooth surfaces result in disorderly nanowires only micrometres in length with subpar properties.
Joselevich comments, “It was surprising to discover that the optical and electronic properties of our nanowires were just as good – if not better – than those grown vertically, because growing semiconductors on a surface usually introduces defects that degrade their quality.”
Although it is still not fully clear how a method that normally produces vertical nanowires works to create horizontal growth in the new study, Joselevich and his team have managed to combine, in a single step, the synthesis and assembly of well-structured nanowires with unique properties suitable for a wide range of applications, by simply getting them “into the groove.”
Further results of this paper have been published in the paper “Guided Growth of Millimeter-Long Horizontal Nanowires with Controlled Orientations” by Tsivion, et al in Science, 19 August 2011: 1003-1007. DOI:10.1126/science.1208455.
