News Article
Kyma's new conductive and semi-insulating GaN templates
The supplier of crystalline aluminium nitride and gallium nitride templates is now providing its customers with added flexibility in terms of epilayer designs and device topologies.
Kyma Technologies has added two new products to its growing product portfolio.
The firm’s new semi-insulating (SE) GaN on sapphire template features a 5 micron thick layer of SE GaN grown on Kyma’s AlN on sapphire template. The typical resistivity of this product ranges from ~1 x 106 ohm-cm to over 1 x 109 ohm-cm; a product resistivity specification of Rs > 1 x 105 ohm-cm has been established.
Kyma’s new highly n-type conductive (n+) GaN on sapphire template features a 5 micron thick layer of n+ GaN grown on Kyma’s AlN-on-sapphire template. The typical resistivity of this product ranges from 5 to 10 milliohm-cm; a product resistivity specification of Rs < 20 milliohm-cm has been established.
Kyma has been supplying GaN templates for several years but, until now, without electrical conductivity specifications.
“Our previous GaN templates served as a great nucleation surface for advanced materials and device development efforts, but presented some limitations to the customer for certain device endeavours,” noted Ed Preble, Kyma’s Chief Technology Officer. “These new additions to our GaN template product line provide the customer with added flexibility in terms of what epilayer designs and device topologies can be used to achieve their goals.”
Kyma’s Technical Sales Engineer, Tamara Stephenson, added, “We are pleased to respond to our customers requests to be given a choice in the conductivity of the GaN layer in our GaN-on-sapphire templates.”
The market for nitride semiconductor devices was $12 billion in 2010 and is expected to reach $90 billion over the long term, including $60 billion in visible lighting applications and $30 billion in power electronics applications.
