News Article
Ammono new n-GaN substrates in a different class
The new products are based on an innovative n-type material which has a higher transparency and a lower carrier concentration and should have additional advantages for the production of LEDs and photovoltaic applications.
Ammono has added a new series of high transparency n-type gallium nitride substrates to its portfolio.
During the last twelve years Ammono has been developing a technology allowing the manufacture of GaN wafers with carrier concentrations between 2x1017 and 2x1020 cm-3. Today the standard n-type product has a carrier concentration of 1019cm-3.
Responding to market needs, Ammono is introducing new products based on an innovative n-type material which has a higher transparency and a lower carrier concentration of 3x1017cm-3. The firm believes its new ammonothermal GaN substrates present additional advantages for the production of LEDs, UV LEDs and also for photovoltaic applications.
The dislocation density in this material remains at a level of 5x104 cm-2 which Ammono says is currently the best commercially available. Initially Ammono will offer high transparency substrates in form factors of 10 mm x 10 mm square wafers and circular 1” wafers. In 2012 besides its standard 2” n-type AMMONO-GaN substrate, the company aims to introduce a 2” product based on this new high-transparency material.
