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Hittite Expands GaN MMIC Power Device Line

The firm is launching a 10W gallium nitride MMIC Power Amplifier which covers 6 to 18 GHz for industrial applications
Hittite Microwave Corporation has revealed a new GaN MMIC power amplifier product.


The company says the device offers significant performance, size and durability advantages for communications, test instrumentation and radar systems


Operating in the 6 to 18 GHz frequency range, the HMC7149 is a 10W GaN MMIC Power Amplifier (PA) which typically provides 20 dB of small signal gain and +40 dBm of saturated output power. The amplifier draws 680 mA quiescent current from a +28V DC supply and features RF I/Os that are matched to 50 Ω for ease of use.





HMC7149 GaN MMIC amplifier


The device, pictured above, also offers high output power capability, a compact die size and simplified biasing, which make it ideal for integration into high power density Multi-Chip-Module (MCM) and subsystem applications.


The HMC7149 is Hittite’s fifth GaN MMIC amplifier to be released during 2013, along with the previously released 2-6 GHz, 25W HMC1086, HMC1086F10 and the 2-20 GHz, 8W HMC1087 and HMC1087F10 amplifiers.


All five GaN MMIC power amplifiers complement Hittite’s extensive line of microwave power amplifiers which provide continuous frequency coverage from 0.01 to 86 GHz.


Hittite Microwave Corporation is a designer and manufacturer of high performance integrated circuits, or ICs, modules, subsystems and instrumentation for technically demanding digital, RF, microwave and millimetre wave applications covering DC to 110 GHz.





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