News Article
SiC & GaN power devices to lead power discrete market
Gallium nitride will benefit the most in the future as it is less expensive that silicon carbide
SiC power semiconductors comprise SiC MOSFET, SiC JFET, SiC BJT, and SiC Schottky diodes.
Currently, SiC is widely used in the development of power semiconductors. However, GaN is a wide bandgap material that offers similar performance benefits to SiC but has greater cost-reduction potential, and the market for GaN power semiconductors is expected to grow rapidly in the coming years.
In addition, GaN can be made available using existing silicon substrates, which can enable mass production and reduced cost. Power semiconductors using next-generation materials such as SiC and GaN are characterised to have lower energy loss, high-speed switching, and higher heat resistance than conventionally-used silicon.
The adoption of SiC and GaN power semiconductors is expected to witness a significant increase, particularly in the EV/HEV and Industrial Motor Drive segments.
Analysts at Technavio forecast the Global Power Discrete market to grow at a CAGR of 8.43 percent over the period 2013-2018. According to the report, the growth of the Global Power Discrete market is driven by several factors, including the high demand for discrete IGBTs. Discrete IGBTs enable increased efficiency in electronic devices ranging from consumer electronics to several high power electronic applications. They play a major role in the technological advancement of power electronics.
The "Global Power Discrete Market 2014-2018," has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the EMEA and the APAC regions, and the Americas; it also covers the Global Power Discrete market landscape and its growth prospects in the coming years. The report also includes a discussion of the key vendors operating in this market.
Furthermore, the report states that the demand for power discrete semiconductors is dependent on the growth of various customer segments including the EV/HEV, Renewable Energy, Industrial Motor Drive, and LED Lighting segments. In recent years, the Industrial Motor Drive segment has been witnessing a slowdown because of several factors such as the sluggish economic recovery in the US, the natural disasters occurring in Japan, and the Eurozone debt crisis.
The report recognises the following companies as the key players in Global Power Discrete Market: Fairchild Semiconductor International Inc., Infineon Technologies AG, Mitsubishi Electric Corporation, STMicroelectronics N.V., and Toshiba Corporation.
Other vendors mentioned in the report are Fuji Electric Co. Ltd., International Rectifier, ON Semiconductor Corp., Renesas Electronics Corp., and Vishay Intertechnology Inc.
Currently, SiC is widely used in the development of power semiconductors. However, GaN is a wide bandgap material that offers similar performance benefits to SiC but has greater cost-reduction potential, and the market for GaN power semiconductors is expected to grow rapidly in the coming years.
In addition, GaN can be made available using existing silicon substrates, which can enable mass production and reduced cost. Power semiconductors using next-generation materials such as SiC and GaN are characterised to have lower energy loss, high-speed switching, and higher heat resistance than conventionally-used silicon.
The adoption of SiC and GaN power semiconductors is expected to witness a significant increase, particularly in the EV/HEV and Industrial Motor Drive segments.
Analysts at Technavio forecast the Global Power Discrete market to grow at a CAGR of 8.43 percent over the period 2013-2018. According to the report, the growth of the Global Power Discrete market is driven by several factors, including the high demand for discrete IGBTs. Discrete IGBTs enable increased efficiency in electronic devices ranging from consumer electronics to several high power electronic applications. They play a major role in the technological advancement of power electronics.
The "Global Power Discrete Market 2014-2018," has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the EMEA and the APAC regions, and the Americas; it also covers the Global Power Discrete market landscape and its growth prospects in the coming years. The report also includes a discussion of the key vendors operating in this market.
Furthermore, the report states that the demand for power discrete semiconductors is dependent on the growth of various customer segments including the EV/HEV, Renewable Energy, Industrial Motor Drive, and LED Lighting segments. In recent years, the Industrial Motor Drive segment has been witnessing a slowdown because of several factors such as the sluggish economic recovery in the US, the natural disasters occurring in Japan, and the Eurozone debt crisis.
The report recognises the following companies as the key players in Global Power Discrete Market: Fairchild Semiconductor International Inc., Infineon Technologies AG, Mitsubishi Electric Corporation, STMicroelectronics N.V., and Toshiba Corporation.
Other vendors mentioned in the report are Fuji Electric Co. Ltd., International Rectifier, ON Semiconductor Corp., Renesas Electronics Corp., and Vishay Intertechnology Inc.
