News Article
ITRI and TNSC unite to enhance GaN LED growth
The firms aim to develop a new UVA LED technology and promote GaN on GaN growth
TNSC, a manufacturer of MOCVD systems, has signed a technical agreement with ITRI in Taiwan which focuses on optoelectronic devices.
The objective of the agreement is to develop UVA LEDs on GaN substrates with TNSC's AP (atmospheric pressure) MOCVD in order to demonstrate the potential of AP-MOCVD, which is a proprietary technology of Taiyo Nippon Sanso.
ITRI says that TNSC's AP-MOCVD system has numerous advantages in growing UVA material. This, ITRI believes, include the high growth rate of low carbon GaN, high luminescence efficiency of low Indium content InGaN and GaN, constant pressure and continuous growth of the InGaN and AlGaN interface and high doping efficiency of AlGaN due to high quality.
Potentially, ITRI and TNSC believe they could develop a higher performance UVA LED on a native GaN substrate at a comparable price to one grown on a conventional sapphire substrate. This, they say, is because it is possible to inject more current into an LED grown on a native GaN substrate due to low dislocation density and easy current spreading.
An almost ideal point light source will improve utilisation efficiency of UV light by simple optics. ITRI and TNSC hope that their partnership will contribute to a new UVA LED technology standard as well as GaN on GaN application promotion.
The objective of the agreement is to develop UVA LEDs on GaN substrates with TNSC's AP (atmospheric pressure) MOCVD in order to demonstrate the potential of AP-MOCVD, which is a proprietary technology of Taiyo Nippon Sanso.
ITRI says that TNSC's AP-MOCVD system has numerous advantages in growing UVA material. This, ITRI believes, include the high growth rate of low carbon GaN, high luminescence efficiency of low Indium content InGaN and GaN, constant pressure and continuous growth of the InGaN and AlGaN interface and high doping efficiency of AlGaN due to high quality.
Potentially, ITRI and TNSC believe they could develop a higher performance UVA LED on a native GaN substrate at a comparable price to one grown on a conventional sapphire substrate. This, they say, is because it is possible to inject more current into an LED grown on a native GaN substrate due to low dislocation density and easy current spreading.
An almost ideal point light source will improve utilisation efficiency of UV light by simple optics. ITRI and TNSC hope that their partnership will contribute to a new UVA LED technology standard as well as GaN on GaN application promotion.
