News Article
MACOM GaN on SiC pulsed power transistor targets radar
The gallium nitride on silicon carbide broadband transistor delivers 55 percent efficiency with 50 V operation over a DC-3500 MHz frequency range
M/A-COM Technology Solutions (MACOM), has revealed a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications.
The MAGX-000035-045000 is a gold-metalised GaN-on-SiC RF power transistor optimised for high performance RF applications such as L-Band and S-Band radar.
MAGX-000035-045000 provides a typical 55 W of peak output power with 11 dB of power gain and 55 percent efficiency. The device is assembled using state of the art design and packaging assembly in a Cu/Mo/Cu flanged ceramic package, which enables the customer to reach higher power and efficiency for today’s demanding applications.
“The new GaN power transistor offers a versatile and high performance solution for pulsed driver and power applications over a broad frequency range,” says Paul Beasly, Product Manager. “The device is a clear leader in S-Band applications with 55 Wpk power and 55 percent efficiency in a small 20.3 x 5.8 mm flanged ceramic package.”
Operating between the DC-3500 MHz frequency range, the MAGX-000035-045000 is a highly robust transistor with high voltage breakdown and boasting a mean time to failure (MTTF) of 600 years.
The table below outlines typical performance.
Samples of MAGX-000035-045000 are available from stock.
The MAGX-000035-045000 is a gold-metalised GaN-on-SiC RF power transistor optimised for high performance RF applications such as L-Band and S-Band radar.
MAGX-000035-045000 provides a typical 55 W of peak output power with 11 dB of power gain and 55 percent efficiency. The device is assembled using state of the art design and packaging assembly in a Cu/Mo/Cu flanged ceramic package, which enables the customer to reach higher power and efficiency for today’s demanding applications.
“The new GaN power transistor offers a versatile and high performance solution for pulsed driver and power applications over a broad frequency range,” says Paul Beasly, Product Manager. “The device is a clear leader in S-Band applications with 55 Wpk power and 55 percent efficiency in a small 20.3 x 5.8 mm flanged ceramic package.”
Operating between the DC-3500 MHz frequency range, the MAGX-000035-045000 is a highly robust transistor with high voltage breakdown and boasting a mean time to failure (MTTF) of 600 years.
The table below outlines typical performance.
Samples of MAGX-000035-045000 are available from stock.
