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Microsemi launch SiC MOSFETs for high-voltage industrial applications

New SiC MOSFETs complemented with SiC power modules develop lighter, smaller, more reliable system designs
Microsemi Corporation, a provider of semiconductor has introduced its new silicon carbide (SiC) MOSFET product family with new 1200 volt (V) solutions.

The new SiC MOSFETs are designed for high-power industrial applications where efficiency is critical. These applications include solutions for solar inverters, electric vehicles, welding and medical devices.

Microsemi is positioned to capitalize on SiC semiconductor market growth. Market researcher Yole Développement estimates that the SiC power semiconductor market will grow 39 percent year-over-year from 2015 to 2020, and Market Research estimates the SiC semiconductor market will grow 38 percent year-over-year to $5.3 billion by 2022.


The new SiC MOSFETs provide patented technology from Microsemi and are designed to help customers develop solutions that operate at higher frequency and improve system efficiency.

"Microsemi's 1200V SiC MOSFETs are establishing a new benchmark for performance," said Marc Vandenberg, general manager for Microsemi's Power Products Group. "Microsemi continues to expand its SiC product portfolio by capitalizing on our in-house SiC fabrication capabilities and delivering innovative high-power solutions to our customers."

Microsemi's 1200V SiC MOSFETs are rated at 80 milliohms and 50 milliohms and provide customers more development flexibility by offering both industry standard TO-247 and SOT-227 packages:

• APT40SM120B      1200V, 80milliohm, 40A, TO-247 package

• APT40SM120J       1200V, 80milliohm, 40A, SOT-227 package

• APT50SM120B      1200V, 50milliohm, 50A, TO-247 package

• APT50SM120J       1200V, 50milliohm, 50A, SOT-227 package

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