Agnitron To Ship 1500degC Reactor Upgrade for MOCVD System
Reactor offers economical growth capability for nitride-based materials and silicon carbide
Agnitron Technology is shipping its latest high temperature reactor upgrade for the Veeco MOCVD D-series Legacy System platform. The single two or three inch wafer, vertical quartz tube reactor upgrade will be fitted to a D180 system at the Korean Photonics Technology Institute (Kopti) in Gwangju, Seoul, South Korea.
According to the company, the High Temperature Radio-Frequency (HT-RF) reactor upgrade provides an economical high temperature growth capability to researchers seeking high quality aluminum nitride (AlN) epitaxial films, which are grown at process temperatures above 1400degC. Additionally, the HT-RF reactor excels at growth of all nitride based materials and is also suitable for silicon carbide.
Ross Miller, director of Agnitron technology development commented: "Ultra-low gas flows of the HT-RF reactor translate to hydride gas consumption 15 percent that of a D180 reactor making this a very capable yet economical choice for researchers." Miller added that Atomic Layer Deposition style switching manifolds are available as an option for supporting Migration Enhanced Epitaxy growth techniques.
Currently the HT-RF reactor is offered as a standalone upgrade for the Veeco Legacy D125 and D180 Nitride MOCVD platforms as well as in the form of an Agnitron original design complete MOCVD system known as Agilis. The Agilis system provides all the process capabilities of the HT-RF reactor but in a compact cabinet with all new electronics and digital hardware communication protocols.
An identical HT-RF reactor upgrade is currently in operation at Agnitron's facility for growth of AlN as part of the power electronics research program funded by the US Department of Energy.