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BeRex Adds New High Performance MESFET Chips

Low phase noise, high linearity MESFETs complement popular line of pHEMTs

BeRex has begun shipping a new family of GaAs MESFET chips, the BCF-series, which addresses the need for low phase noise with high gain and power in applications such as single and multi-stage amplifiers, oscillators, synthesizers, etc. ranging in frequency from DC to 26.5GHz. 

"These parts along with our existing pHEMT family of packaged and bare-die FET products go a long ways towards fulfilling the commitment to our clients of becoming their one-stop source for their RF and microwave FET needs", said Alex Yoo, VP of research and development at BeRex.

The BeRex BCF-series of MESFET chips are suited to both broadband and narrow band applications from DC to 26.5GHz.  Typical application requires a high level of OIP3 (Output Third-Order Intercept Point) linearity and a low phase noise that cannot be easily achieved with other technologies.

This BCF-series family consists of seven devices, each is built using a 0.25µm gate length and with a gate width of 200µm, 300µm, 400µm, 600 µm, 800µm, 1200µm or 2400µm, depending on the clients gain and power requirements (up to 1W for the largest 2400µm device).

The BeRex BCF-series chips are are now available in sample and production volumes.  

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