Plessey Demonstrates Large GaN-on-Si LED Capability
20 square mm GaN-on-Si LED die generates up to 5W of blue light
Plessey today announced its capability to make large, high-performance, high-volume GaN-on-Si LED die. It has produced a 20 square mm die design that will generate up to 5W of blue light over a 400-480nm wavelength range, as a technology demonstrator.
According to Plessey, this large die benefits from three features of the Plessey process; low thermal resistance of silicon; a single-surface, emitter die design; and 6-inch wafer processing.
Large area LED die help customers in many ways, particularly for Chip-on-Board (CoB) products in providing a much simpler, more uniform light emitter whilst reducing die attach and wire bond overheads. The low thermal resistance of the silicon substrate makes for easier thermal management and enhanced reliability resulting from lower temperature operation.
The die uses Plessey's vertical design structure that has a cathode top and anode bottom contacts, which is ideal for scaling the effectiveness in applying large die. And, with 6-inch wafer processing coupled with best-in-class across wafer uniformity, Plessey makes such large die a real commercial proposition.
David Owen, Plessey's marketing director, explains: "It is clear that the next wave of general lighting products will see LEDs applied in ways that truly exploit the benefits obtained through Plessey's leading GaN-on-Si technology. This announcement marks the start of a phase where we engage with our key partner customers in defining the commercial realisation of lighting products based on Plessey's large GaN-on-Silicon LED die."
AngelTech Live III: Join us on 12 April 2021!
AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST)
and will feature online
versions of the market-leading physical events: CS International
and PIC International
PLUS a brand new Silicon Semiconductor International
Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.
We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.
Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.
So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.
REGISTER FOR FREE