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Toshiba Extends SiC Power Modules To 3300V And 1500A

Plastic module combines injection-enhanced gate transistor and SiC diode 

Toshiba Electronics Europe has extended its family of SiC devices with the launch of a high-efficiency 3300V, 1500A power module. The MG1500FXF1US71 integrates an N-channel IEGT (injection-enhanced gate transistor) and an SiC fast recovery diode (FRD) into a package with a footprint of just 140mm x 190mm.

Toshiba's new module will save energy, space and weight and reduce acoustic noise in high-power switching inverter and motor control designs. Target applications include rail traction, industrial motor control, renewable energy systems and electricity transmission and distribution.

Use of an SiC Schottky barrier diode significantly decreases reverse recovery current - and leads to a corresponding decrease in turn-on loss - compared to silicon alternatives. A combination of diode and an improved internal package design to reduce stray inductances allows the MG1500FXF1US71 to operate with a reverse recovery loss up to 97 percent lower than a module that uses a conventional silicon diode.

The MG1500FXF1US71 offers an isolation voltage rating of 6000VAC (rms for one minute) and can handle a peak turn-off collector current of 3000A. Collector power dissipation (at 25degC) is 5000W. An operating temperature range of -40degC to 150degC is compatible with the extended temperature environments that characterise the target applications.

During development the 3300V, 1500A hybrid module was incorporated into a rail traction inverter design. By using the module the overall size of the motor control sub-assembly (including cooling system) was reduced by 40 percent. In addition, use of the module helped to reduce acoustic noise and improve ride quality



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