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SAMCO to offer customer demos on new GaN-on Si MOCVD system

SAMCO, the Japanese semiconductor process equipment company, has announced MOCVD demonstration capability on a new GaN-on-Si system, the GaN-550, from Valence Process Equipment Inc (VPE) of Branchburg NJ, USA.

SAMCO sells and distributes the GaN-550, which is equipped with a 550mm in diameter carrier for mass production of GaN power devices. The demo system will be available for customer demonstrations at SAMCO's R&D facility in early 2015.

SAMCO is expanding its wide range of dry etching and plasma-enhanced chemical vapor deposition (PECVD) systems for wide-bandgap semiconductor applications such as LEDs, laser diodes and RF devices. One of SAMCO's strengths is the process of nitride semiconductors, which play important role in green electronics.

VPE is a start-up company, providing MOCVD systems for GaN-based LEDs. VPE's GaN-500 MOCVD system employs a unique reaction chamber design and is highly-efficient at reducing gas consumption by up to 40 percent compared with other MOCVD systems.

SAMCO has installed a new GaN-550 MOCVD system, which was developed from GaN-500, and has low process gases consumption, high-speed gas switching, and superior temperature control. The specially designed gas injector requires fewer reactor cleanings, which increases system availability and uptime.

The GaN-550 system can grow more than 5µm/hour GaN at the uniformity of less than 1 percent. While the carrier size of GaN-500 is 500 mm in diameter, the carrier size of GaN-550 is 550 mm in diameter for higher throughput, up to 2 inch x 72, 4 inch x 20, 6 inch x 7 or 8 inch x 4 per batch.

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