Ammono starts fabrication of 2-inch semi-insulating GaN substrates
Ammono SA, a Polish manufacturer of GaN by the ammonothermal method, has developed new types of highly resistive 2-inch Ammono-GaN semiconductor crystals. These were successfully used for production of 2-inch highly-resistive substrates as part of thef European Space Agency PECS programme 'Low Dislocation GaN for Space Applications' under the supervision of Andrew Barnes (ESA).
The crystals possess a high structural quality, confirmed by narrow X-ray diffraction rocking curves (20 arcsec) and large curvature radius (reaching few hundred metres), according to the company. The resistivity, estimated by capacitive and microwave methods, is at least 1010Î©cm, proving extremely isolating properties of the new material.
"Our new semi-insulating Ammono-GaN substrates enable efficient epitaxy and processing of GaN-based HEMTs," said Marcin ZajÄ…c, senior scientist and project coordinator at Ammono. "High substrate resistivity prevents parasitic current leakage in lateral transistors, which is necessary for a proper operation of the final device. Moreover, it is expected, that the very low dislocation density of the GaN substrate and epitaxial device structure is a key issue in device reliability, which is essential for the application of the developed material in space electronics -transistors for RF communication, radars, DC-DC power converters, high efficiency solar panels and many others".
The detailed parameters and measurement results were presented at the ESA 7th Wide Band Gap Semiconductor and Components Workshop 11-12 September 2014, ESA-ESRIN, Frascati (Rome), Italy, by Marcin ZajÄ…c.
Ammono is interested in establishing commercial and scientific collaboration, both in frame of the domestic and international projects.