Mitsubishi to Release 3.5GHz-band GaN-HEMTs
Mitsubishi has announced today that it has developed GaN HEMTs offering top-level output power and efficiency for use in Base Transceiver Stations (BTS) operating in the 3.5GHz band for 4G mobile communication. Samples will be released starting April 1.
As a result of the deployment of Long Term Evolution (LTE) and LTE-Advanced mobile networks, needs are rising for BTS that can offer increased data volume, smaller size and lower power consumption.
In response, Mitsubishi Electric has developed and will begin shipping samples of a world-leading class of high-output, high-efficiency GaN-HEMTs for macro- and micro-cell BTS.
According to the company the devices features world-leading power output of 100W for macro-cell BTS. Moreover, high efficiency helps to reduce BTS size and power consumption.
100W device for macro-cell BTS realises drain efficiency of 74 percent. The 9W device for micro-cell BTS has a drain efficiency of 67 percent. High efficiency allows a simpler cooling system, contributing to reduced size and power
