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Qorvo adds Plastic packaged GaN Transistors for Radar and comms

Input-matched GaN-on-SiC HEMTs can be optimised for power and efficiency within the band

Qorvo has introduced a family of input-matched GaN transistors in a low-cost plastic package designed to enable cost effective commercial and military radar and radio communications systems.

"Qorvo's input-matched GaN transistors have become very popular because they can be optimised for power and efficiency within the band, enabling RF systems to have greater flexibility and simplified board design," said James Klein, Qorvo's president of Infrastructure and Defence Products. "By expanding the portfolio of GaN transistors to include low-cost plastic packaging, Qorvo is providing customers with cost-effective, scalable GaN solutions that are also very power efficient."

The 5W TGF2965-SM (0.03 to 3GHz), 5W TGF3020-SM (4 to 6GHz) and 10W TGF3015-SM (0.03 to 3GHz) input-matched transistors enable high linear gain and power efficiency in a surface-mount plastic QFN package. The integrated input matching network enables wideband gain and power performance. 

The 30W TGF2031-SM (0.03 to 4GHz) also features plastic packaging as well as providing continuous-wave capabilities for military communications applications. 

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