Soitec and SITRI in RF silicon on insulator partnership
Soitec, a French semiconductor materials company, and the Shanghai Industrial µTechnology Research Institute (SITRI), have signed an agreement to develop RF-SOI (Silicon On Insulator) technology using advanced circuit designs based on Soitec's substrate materials and technologies.
The aim of the partnership is for Soitec and SITRI to strengthen their role in the RF market, with a special emphasis on the fast-developing Chinese RF ecosystem.
"Experience shows that Soitec's engineered substrates can optimise RF-SOI technology and applications in terms of both cost competitiveness and power efficiency. This strategic partnership will enable us to push the limits of RF circuits and meet future connectivity needs," said Carlos Mazure, chief technical officer of Soitec.
"Enhancing RF signal integrity is a key focus of the mobile communications industry as it builds toward 4G-LTE Advanced and 5G standards. We are excited to partner with Soitec in developing next-generation SOI communication solutions. It is consistent with SITRI's mission to create a collaborative R&D and commercialisation environment to catalyse the growth of advanced technologies," said Charles Yang, president of SITRI.
SITRI is a Chinese research centre established to accelerate the development and commercialisation of "˜More than Moore' technologies to power the Internet of Things.
