News Article
EPC announces tiny but powerful eGaN FET
1.82 mm2 device targets high frequency power conversion
EPC has announced the EPC2039 FET, a high power-density enhancement-mode GaN device.
The EPC2039 is a small, 1.82 mm2, 80VDS, 6.8A FET with a maximum RDS(on) of 22mΩ with 5V applied to the gate.
According to the company, this GaN power transistor delivers high performance in power conversion systems due to its high switching capabilities in a very small package.
The EPC2039 has many uses but is primarily designed for high frequency power conversion applications, such as AC-DC synchronous rectification, Class-D audio, high voltage buck converters, wireless power transfer, and pulsed power (LiDAR) applications. Emerging LiDAR applications include driverless vehicles and augmented reality.
