Plessey To Present At Nitride Conference
Advances in blue GaN-on-Silicon LEDs to be presented at 11th International Conference On Nitride Semiconductors (ICNS)
Plessey has announced that it will be presenting at the 11th International Conference On Nitride Semiconductors (ICNS-11) on 1st of September, 2015 in Beijing. The ICNS will showcase high impact scientific and technological advances in materials and devices based on group-III nitride semiconductors. The conference is featured by plenary sessions, parallel topical sessions, individual presentations and an industrial exhibition.
Plessey's proprietary epitaxy structure enables high quality, crack-free material to be grown with a relatively thin epi thickness of 3.75Âµm on 150mm silicon substrate, resulting in significant growth time savings and process throughput with results that also attests to the feasibility of GaN-on-Silicon technology for solid state lighting applications.
Plessey's Senior Engineer, Liyang Zhang, said: "The ICNS is the largest GaN conference in Asia and there will be some very influential speakers, including Hiroshi Amano and Shuji Nakamura, both Nobel Prize Winners in Physics. This conference will be a great platform for Plessey to present high impact technological and manufacturing advances in blue GaN-on-Silicon LEDs. It will also be a good opportunity for Plessey to promote further cooperation with the Asian market."
The biennial conference was first held in Nagoya, Japan in 1995 and since then has travelled to Tokushima, Japan; Montpellier, France; Denver, USA; Bremen, Germany; Las Vegas, USA; Jeju, Korea; Glasgow, UK; and Washington DC, USA.
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