GaN Systems appoints director of product line management
GaN Systems has appointed Peter Di Maso as director, product line management. The newly-created position is part of the company's strategic growth and headcount increase at all levels as the company ramps up production of its market-leading Island Technology GaN power devices to supply global demand from design engineers.
Di Maso will be responsible for creating and executing a sustainable product and market strategy to achieve GaN Systems' business growth objectives. Working closely with customers, sales teams and development teams, Di Maso will lead and execute the development of new product ideas, continuously exploring boundaries to provide innovation and customer value.
"Peter joins us with more than twenty years' experience in the power electronics industry and we are delighted to welcome him to the company." comments Girvan Patterson, President GaN Systems. "Peter's background includes strategic product marketing at Texas Instruments, expertise in automotive ICs gained at Allegro Microsystems and an early career as a power supply design engineer at Bell-Northern Research. This is an extremely relevant portfolio of experience and skills, and places him in a perfect position to lead teams dovetailing our innovative GaN technology with creative customer solutions."
Di Maso holds a Bachelor of Engineering degree (Electrical) from Concordia University in Montreal and is currently completing an MBA at Southern New Hampshire University in Manchester. He has lived and worked in the USA and Canada and enjoys participating in local community projects and spending time with his family. He will be based in GaN Systems' Headquarters in Ottawa.
GaN Systems has developed a portfolio of GaN E-HEMT power devices with current ratings from 7A to 250A, in both 650V and 100V ranges. GaN Systems' Island Technology die design, combined with the extremely low inductance and thermal efficiency of GaNPX packaging and Drive Assist technology, is said to provide its GaN E-HEMTs with 45x improvement in switching and conduction performance over silicon MOSFETs and IGBTs.
