Loading...
News Article

Anadigics WIFI chips shipping for Buffalo Router

InGaP front end ICs provide integration, efficiency, and linearity to latest 802.11ac router

RF company Anadigics has announced that it is shipping production volumes of its AND0281 and AND0581S WiFi infrastructure front-end integrated circuits (FEICs) to Buffalo for the new WXR-1750DHP router.

This high-performance 802.11ac router features three antennas with simultaneous dual-band capabilities and four gigabit wired Ethernet ports.

Based on the company's patented InGaP-Plus technology, Anadigics' WiFi infrastructure FEICs combine a high performance power amplifier (PA), low-noise amplifier (LNA) with bypass option and RF switch on a single die. The AND0281 is optimised for 2.4 GHz applications with 28dB linear power gain and -35dB dynamic error vector magnitude (EVM) at +18dBm output power.  The AND0581S operates in the 5GHz frequency band with 29dB linear power gain and -35dB dynamic error vector magnitude (EVM) at +16dBm output power. Both FEICs are tuned for optimal performance in 802.11ac applications.

"Buffalo continues to raise the bar in router and access point connectivity with unparalleled speed, range, and features," said Masaya Ishimaru, Network Business Unit general manager at Buffalo. "Our new WXR-1750DHP 802.11ac router includes HighPower and Beamforming technologies to ensure optimal performance for even the most demanding users."

"We are very pleased to partner with Buffalo on the latest generation of its AC1750 class router," said Dave Cresci, president of Anadigics. "Reliance on WiFi networks continues to grow as the number of connected devices rises. Anadigics' WiFi infrastructure FEICs support this trend by providing an industry-leading combination of integration, efficiency, and linearity to minimise time-to-market and maximise throughput at extended ranges."

 

New efficiency record for CIGS perovskite tandem cells
Realising tuneable InGaN laser diodes
SiC patenting strong in Q4 2024, says KnowMade
Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
Multiple materials vie for RF success
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: