Macom to Showcase latest GaN technology in Paris
Macom will be exhibiting its GaN RF product and technology portfolio at European Microwave Week, September 6-11th in Paris, France, including its latest Gen 4 GaN-on-Silicon RF technology.
At volume production levels, Gen 4 GaN technology is expected to yield devices that achieve breakthrough performance and higher efficiency below the semiconductor cost per watt of comparable LDMOS products, and at significantly lower cost than comparably performing GaN on SiC wafers.
As a member of the RF Energy Alliance, Macom is aiming to bring its GaN RF technology into mainstream applications, including RF ignition systems, solid-state cooking and high-lumen plasma lighting.
At the conference, guest speaker Klaus Werner will be talking about the future of RF Energy on September 9, while other Macom speakers will be giving papers on a range of topics including Pulse-to-Pulse Stability in GaN RADAR Amplifiers and GaN Schottky Diodes for RF Wireless Power Detection and Conversion.
Members of Macom's product management, engineering and applications teams will be at the show to answer any inquiries or questions.
