Rohm adopts latest model of Lasertec SICA system
Lasertec Corporation announced today that the power semiconductor device maker Rohm has selected the latest model of Lasertec's SICA, SiC wafer inspection and review system.
Rohm has decided to introduce the latest model of SICA as part of its efforts to further enhance SiC device quality and production infrastructure.
Amid various challenges, one of the critical factors in the mass production of high quality SiC wafers and devices devices is to reduce defects that are commonly generated during grind and epitaxial processes.
In this respect, it is extremely important to have a capability to accurately and quickly detect and categorize defects that affect device performance. Defects of interest (DOI) include not only scratches and epi-defects on wafer surface but also crystal-related defects such as basal plane dislocations (BPD) and stacking faults (SF) inside epi-layers. Eliminating these killer defects early in the process ensures high device yield in mass production.
The latest model of SICA incorporates a photoluminescence-based technology that enables the simultaneous detection of both surface defects and crystal defects at a significantly higher throughput. Lasertec will continue to pursue the development and advancement of defect inspection technologies in order to facilitate the further enhancement of power device quality and productivity.