GaN Systems shows 100A, 650V GaN transistors in Montreal
GaN Systems, a Canadian developer of GaN power switching semiconductors, is displaying its new GS66540C 650V, 100A high current GaN power transistor at ECCE'15, the IEEE Energy Conversion Congress & Expo in Montreal, September 20 - 24 2015.
GaN Systems' new GS66540C high current power transistor is based on proprietary Island Technology and belongs to its 650V family of high density devices that achieve efficient power conversion with fast switching speeds of >100V/nS and ultra-low thermal losses.
The GS66540C is supplied in a form of GaNPX packaging specially developed for higher operating currents, providing lower inductance and greater surface mount mechanical robustness required by power modules for the industrial and automotive markets. The near-chipscale parts have no wirebonds and offer step-change improvements in switching and conduction performance over traditional silicon MOSFETs and IGBTs.
Parts are now sampling with major customers, including OEMs and Tier 1 manufacturers, and are being designed in to solar, industrial and automotive applications as global manufacturers race to use the power of GaN to secure competitive advantage.
Also on display will be multiple customer platforms, including an exciting 2kW commercial vehicle inverter from the leading global transportation technology company, Ricardo, and a new 3kW, 800/380V DC/DC bidirectional converter to enable energy efficient power systems in the home, developed by NextHome, a US consortium of consumer electronics manufacturers.
