Evaluation Board simplifies GaN transistor circuit design
GaN Systems, a manufacturer of GaN power transistors, has announced a new Half-Bridge evaluation board to demonstrate the performance of its GaN enhancement mode power semiconductors in real power circuits. The GS66508T-EVBHB board is said to be easily configured into any half bridge-based topology, including Boost and Buck modes.
Designed to provide electrical engineers with a complete working power stage, the evaluation board consists of two 650V, 30A GS66508T GaN FETs, half bridge gate drivers, a gate drive power supply, and heatsink.
It comes with a Quick Start instruction guide and YouTube video links to have the installation up and running in minutes. The kit has full documentation, including Bill-of-Materials component part numbers, PCB layout and thermal management, and gate drive circuit reference design which is also useful for system engineers to use in their products.
The GS66508T high power transistors are based on GaN Systems' proprietary Island Technology and belong to its 650V family of high density devices which achieve efficient power conversion with fast switching speeds of >100V/nS and ultra-low thermal losses.
The 30A/55mΩ GS66508T GaN power transistors are top-side cooled and feature near-chip-scale, thermally-efficient GaNPX packaging. 98.7 percent power conversion efficiency at 1.5kW is shown in the product documentation and can be reproduced in the owner's lab.
GaN Systems has a portfolio of GaN power transistors with voltage ratings of 100V and 650V and current ratings from 7A to 250A. The company says its Island Technology die design, combined with the extremely low inductance and thermal efficiency of GaNPX packaging, provides its GaN FETs with 45x improvement in switching and conduction performance over traditional silicon MOSFETs and IGBTs.
