Toshiba Unveils new RF SOI Process
Toshiba Electronics Europe has announced a next generation silicon on insulator process called TarfSOI (Toshiba advanced RF SOI) optimised for radio-frequency (RF) switch applications.
RF switch ICs, made using the new TaRF8 process such as the new SP12T Single Pole Twelve Throw Switch, are claimed to achieve the lowest-class of insertion loss in the industry.
Designed for use in smartphones, the SP12T RF switch has an insertion loss of 0.32dB at 2.7GHz. The device features an integrated MIPI-RFFE controller for mobile applications and is suitable for use in devices compliant with 3GPP GSM, UMTS, W-CDMA, LTE and LTE-Advanced standards.
Compared with products using Toshiba's current TaRF6 process, insertion loss is improved by 0.1dB while maintaining the same level of distortion characteristics.
Sample shipments of the SP12T will start in January 2016.
With the trend in mobile communications towards high data rate, high-capacity data transfers, RF switch ICs used in mobile devices and smartphones, require multi-port support and improved RF performance. Lowering insertion loss is recognised as a particularly important factor in this, as it decreases RF transmission power loss, which can support a longer battery life for mobile devices.
By handling all aspects of the production flow, from RF process technology development to the design and manufacturing of RF switch chips, Toshiba says it can swiftly improve SOI-CMOS process technology in response to feedback from the development results of its own RF switch IC products.