Rohm Expands SiC Power Module Lineup
Rohm has announced the development of a 1200V/300A full SiC power module designed for inverters and converters in solar power conditioners and industrial equipment.
The high 300A rated current makes the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment. 77 percent lower switching loss versus conventional IGBT modules enables high-frequency operation, contributing to smaller cooling countermeasures and peripheral components.
Rohm began mass production of the world's first full SiC power module with an integrated power semiconductor element composed entirely of SiC in 2012. And the company's 120A and 180A/1200V products continue to see increased adoption in the industrial and power sectors. While further increases in current are possible, a new package design was needed to maximise high-speed switching and minimise effects of surge voltage during switching, which can become particularly problematic at higher currents.
In response, the BSM300D12P2E001 features an optimised chip layout and module construction that significantly reduces internal inductance, suppressing surge voltage while enabling support for higher current operation up to 300A. Going forward, Rohm says it will continue to strengthen its lineup by developing products compatible with larger currents by incorporating SiC devices using high voltage modules and trench configurations.
The full SiC module integrates a SiC SBD and SiC-MOSFET in a single package, which is equivalent in size to a standard IGBT module. It also has a built-in thermistor. Tjmax is 175degC.
