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Compound Semis To Play Key Role At IEDM 2015

III-V nanowires, IGZO transistors and GeSn lasers featured in US conference

At the IEEE International Electron Devices Meeting in Washington DC later this week, compound semiconductors will feature in a number of key papers. As a pre-eminent forum for reporting technological breakthroughs in semiconductor and electronic device technology, the conference is regarded as a guide to what the industry might expect in future devices and emerging materials.

A research team at the National University of Singapore, for example, will be describing the first use of vertically stacked III-V nanowires to integrate high electron-mobility III-V semiconductors monolithically and cost-effectively with traditional CMOS silicon technology at sub-7 nm technology nodes. The researchers built a sub-150nm high-quality GaSb buffer layer on silicon and multi-gate InAs nFETs and GaSb pFETs from stacked InAs or GaSb nanowires, respectively. The fabrication technology is suitable for both high-performance and low-power logic applications, according to the researchers.
National Nano Device Laboratories in Taiwan will discuss gate-all-around nanowire MOSFETs with diamond-shaped germanium and GeSi nanowire channels. The researchers are seeking to find a way to more effectively use germanium as the channel material in multi-gate device configurations for scaling beyond the 10-nm technology node. The researchers made germanium and GeSi nanowires into diamond cross-sectional shapes and used the nanowires as suspended channels ina gate-all-around MOSFET configuration.

A team from Japan's Semiconductor Energy Laboratory will explain how it made 20nm gate-all-around MOSFETs with low off-state currents of <0.1pA and cutoff frequencies exceeding 10GHz. The transistors were made from thin films of indium-gallium-zinc-oxide (IGZO) and built using a self-aligned process that eliminated overlaps from the gate to the source and drain. The low off-current allowed for data retention of >10 days at 125degC, when integrated in a DRAM memory cell.

Fujitsu researchers will report using InAlGaN and a novel double-layer SiN passivation technique to build 80nm-channel-length InAlGaN/GaN power HEMTs with a record 3W/mm output power density at 96GHz, which is 60 percent improvement over the best results reported to date. The HEMTs' power and reliability performance is suitable for use in amplifiers from 75 to 110GHz.

A European research collaboration led by Germany's Forschungszentrum Juelich institute, will report on a silicon-based direct-bandgap GeSn micro-disk laser that emits at a lasing wavelength of 2.5µm at a power output of 221 kW/cm2. The device was built using standard CMOS-compatible processing and was monolithically integrated on a silicon platform.

AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

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We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.



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