Mitsubishi Expands 4G GaN-HEMT range
Mitsubishi Electric has announced an expansion of its lineup of GaN-HEMTs for use in Base Transceiver Stations (BTS) operating in the 3.5GHz band of 4G mobile communication systems.
The four new GaN-HEMTs offer output power and efficiency levels that are among the highest currently available according to company research. Samples will be released at the beginning of February 2106.
As a result of the deployment of Long Term Evolution (LTE) and LTE-Advanced mobile networks, needs are rising for basestations that can offer increased data volume, smaller size and lower power consumption. In response, Mitsubishi Electric has developed the new GaN-HEMTs designed for use in macro BTS and large numbers of micro cells that mobile network operators are employing to increase the data capacity of their advanced 4G networks built with LTE and LTE-Advanced technologies
The 90W model for macro-cell BTS achieves drain efficiency (load pull) of 74 percent, while 7W and 5W models for micro-cell BTS achieve drain efficiency of 67 percent. According to the company, these high efficiencies allow use of simple cooling system, which contributes to smaller size and lower.
