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EpiGaN and SunEdison Semiconductor sign deal

Exclusive rights agreement covers 150mm and 200mm GaN-on-Si epiwafers for power switching

EpiGaN, a European supplier of 6- and 8-inch GaN-on-silicon epi-wafers for 600-V HEMT power semiconductors, and SunEdison Semiconductor, a manufacturer of silicon substrates, have signed a global representation agreement for EpiGaN's GaN-on-Si epi wafers.

The terms of the global representation and distribution agreement between EpiGaN and SunEdison Semiconductor, effective January 1, 2016, grant SunEdison Semiconductor exclusive rights for the marketing and sales of EpiGaN's 150mm and 200mm GaN-on-Si Epiwafers for power switching applications, substantially strengthening EpiGaN's worldwide reach and transition EpiGaN into a global GaN epiwafer supplier.

"This new agreement with a well established supplier such as SunEdison Semiconductor, with its excellent track record in the power electronics industry, will enable us to provide additional value to our global customer base through our superior GaN-on-Si products, customer services & technical support," said  Marianne Germain, cofounder and CEO of EpiGaN. 

"We are proud to collaborate with the EpiGaN team," commented Shaker Sadasivam, SunEdison Semiconductor's president and CEO. "EpiGaN's strong technology capability compliments our own, and we look forward to further developing this promising market together." 

EpiGaN, located in Hasselt, Belgium, develops III/V materials and delivers GaN-on-Si epi-wafers to semiconductor device manufacturers. EpiGaN's product portfolio covers power switching applications up to 650V as well as RF power devices for millimeter-wave applications. EpiGaN is today developing and sampling GaN structures on 200mm Si substrates for power switching devices to enable its customers to successfully position themselves in rapidly growing market segments.

A key concept of EpiGaN's technology base is the in-situ SiN cap layer, which allows the use of pure AlN layers as barrier material with the resulting heterostructures having sheet resistance values below 300Ohm/sq.

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