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Hybrid IIIV/SiGe technology for CMOS and beyond

CS International 2016; 1,2 March 2016, Brussels, Belgium
At CS International 2016, IBM's Lukas Czornomazn will be presenting a paper on 'Hybrid IIIV/SiGe technology for CMOS and beyond, opportunities for 3D monolithic integration'. 

This will be one of 30 presentations spanning five sectors delivered by industry-leading insiders at the international conference on compound semiconductor devices which will be held on the 1st and 2nd March 2016, Brussels, Belgium.

These talks will detail breakthroughs in device technology; offer insights into the current status and the evolution of compound semiconductor devices; and provide details of advances in tools and processes that will help to drive up fab yields and throughputs.

Czornomazn's presentation will look at the requirements for high performance, lower power transistors in CMOS technologies in sub-10nm node. High-mobility channel materials such as germanium, SiGe and III-V compound semiconductors are leading candidates to deliver necessary power-performance benefits. He will review the manufacturing challenges as well as some of the solutions available for fabrication of hybrid CMOS circuits. Emphasis will be put on the unique opportunities for 3D monolithic integration offered by the potentially low processing temperature of III-V semiconductors.

Keynote presentations at the conference will include:

James Klein (Qorvo) At the core of 5G
Daniel Fernandez:  EU Project SPEED (Silicon carbide wide band-gap devices for energy applications)
Abdelmalek Hanafi (BMW): Doubling driver visibility with laser-based headlights
Yanning Sun (IBM):  III-V/Si integration: Moore and more
Carlos Algora (Technical University of Madrid):  Perspectives of concentrator photovoltaic technology

CS International 2016 conference website: http://www.cs-international.net/
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