Loading...
News Article

Wolfspeed to Exhibit SiC Power at APEC 2016

Latest boards will allow engineers to evaluate 900V SiC MOSFET designs

Wolfspeed has announced that it will be demonstrating a number of its 900V SiC MOSFET products at this year's Applied Power Electronics Conference and Exposition (APEC 2016) March 20 "“ 24, in Long Beach California.

These include an evaluation board that enables power electronics design engineers to quickly implement the company's 900V SiC MOSFETs and an evaluation unit using high-performance SiC power modules for three-phase inverter applications.

"We're excited to offer the industry's first 900V SiC MOSFET portfolio, especially our exclusive SiC-optimised surface-mount packaged devices," said Guy Moxey, Wolfspeed's senior director of power products. "Our latest evaluation board allows design engineers to quickly and easily evaluate the quality and performance of these MOSFETs for themselves."

The evaluation board, which is currently available through authorised distributors, contains two 900V C3M MOSFETs with separate Kelvin sources configured in a flexible half-bridge circuit capable of prototyping a synchronous buck or boost inverter. This represents an optimal board layout, short circuit protection, and thermal management using an isolated heatsink to evaluate any 7L-D2PAK 900V Wolfspeed MOSFET.

Wolfspeed will also demonstrate a new high-performance three-phase power evaluation unit that reduces the development time required to implement SiC power modules in a three-phase inverter.

Using the company's soon-to-be released CAS300M12HM2 SiC power module and gate drivers, the evaluation unit provides a modular, configurable circuit design using standard components to rapidly optimise three-phase SiC power module designs for performance, efficiency, thermal management, and circuit protection.

In addition to their exhibition, Wolfspeed engineers will be presenting new research and leading application panels as part of the conference program.

SiC patenting strong in Q4 2024, says KnowMade
Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: