EPC Publishes GaN FET Reliability Report
Shows distribution of over 17 billion accumulated field-device hours
EPC has published its eGaN FET Phase Seven Reliability Report showing the distribution of over 17 billion accumulated field-device hours and detailing test data from more than 7 million equivalent device-hours under stress.
The stress tests included intermittent operating life (IOL), early life failure rate (ELFR), humidity with bias, temperature cycling, and electrostatic discharge. The study reports a composite 0.24 FIT rate for products in the field, which EPC says is consistent with all of the company's in situ evaluations to date and validates the readiness of eGaN FETs to supplant their aging silicon cousins for commercial power switching applications.
According to Alex Lidow, CEO and co-founder of EPC: "Demonstration of the reliability of new technology is a major challenge and one that EPC takes very seriously. The results of this study show that EPC GaN products have the requisite reliability to displace silicon as the technology of choice for semiconductors."
For this report, EPC's eGaN FETs were subjected to a wide variety of stress tests under conditions that are typical for silicon-based power MOSFETs. eGaN FETs were stressed to meet the latest JEDEC standards, when possible.
All seven phases of the reliability test program are available at epc-co.com.
