Transphorm introduces 650V GaN FET with 41mΩ Rds(on)
Transphorm, a developer of JEDEC-qualified 650V GaN semiconductors, has introduced the TPH3207WS GaN FET with a low on-resistance (41mΩ) in a TO-247 package.
The FET reduces system volume as much as 50 percent without sacrificing efficiency, according to the company.
The device's low Rds(on) and ultra-low Qrr (175nC) bring the benefits of GaN to applications that previously relied on silicon, says Transphorm, enabling engineers to achieve power-dense solutions with reduced component count and improved reliability in high-voltage power conversion applications.
Features include ease-of-use and the ability to use more efficient technologies. A cascode configuration (EZ-GaN) means it can be easily driven with off-the-shelf drivers and its TO-247 industry-standard packaging allows for ease of design and development and low EMI.
Designers can reduce overall power supply losses by as much as 40 percent while achieving up to 99 percent efficiency by implementing continuous conduction mode (CCM) bridgeless totem-pole PFC designs, says Transphorm.
Transphorm's GaN FET portfolio is also strengthened with the introduction of the TPH3208 family (130mΩ) in industry-standard TO-220 and PQFN packages.
