$13.5M for US DoD SiC development
The US Department of Defense's Air Force Research Laboratory is looking to award a cooperative agreement for the development of large SiC substrate and epitaxial processes to advance current technology in terms of affordability and quality.
The estimated total program funding available is $13.5 million.
RF GaN devices are rapidly becoming the technology of choice for high power RF applications. But they depend upon the use of high quality, semi-insulating SiC substrates. The combination of high voltage and current handling as well as switching frequency capabilities make SiC based power devices a viable alternative to silicon technology.
The funding opportunity number is RFI-AFRL-RQKS-2016-0002 (CFDA 12.800). It was posted on March 18 with an application closing date of April 18.
