Rohm to show third generation SiC devices at PCIM
At PCIM in Nuremberg from May 10-12, 2016, Rohm Semiconductor will be exhibiting its third generation of SiC Schottky Barrier Diodes (SBD) and a third generation 1200V/180A SiC module.
Rohm's SiC SBDs will include devices rated at 650V/6, 8, 10A in a TO220AC package. They are claimed to offer the lowest VF and lowest IR within the entire temperature range among all SiC SBDs available in the market. This third generation contains PN junction structure along with Schottky Barrier so durability in bipolar operation is also ensured, says Rohm.
Rohm will also present its new SiC power module BSM180D12P3C007 rated at 1200V/180A. The Half-Bridge SiC module integrates mass-produced trench-type SiC MOSFETs and embedded SiC SBDs in the same footprint like previous modules.
Based on the advanced UMOS structure, the new module achieves 77 percent lower switching loss than conventional IGBT modules and 42 percent lower switching loss than SiC modules using SiC-DMOS structure, according to the company.
