News Article

Laytec Improves Nk Database

EpiTT Gen3: x-ray diffraction-referenced nk database for InP and related materials

InP based materials exhibit higher electron mobility and higher frequency response compared to GaAs. This makes InP HBTs a good candidate for next generation transimpedance amplifiers in optical fibre communications and 5G applications, notes metrology company Laytec. 

Moreover, since InP HBT's base bandgap energy is much lower than that of GaAs HBTs, the InP based device's turn-on voltage and related power consumption are significantly lower.

However, the high-yield MOCVD growth of device grade quaternary InGaAsP and InGaAlAs structures precisely lattice-matched to InP is rather challenging, especially on larger wafers. According to Laytec, the solution is in-situ process control based on accurate high temperature quaternary nk data. 

Working with Tony Spring Thorpe's team at National Research Council of Canada and Christoph Hums and his co-workers at Fraunhofer HHI Berlin (Germany), LayTec has now further improved the accuracy level of its nk database for the two quaternary material systems InGaAsP and InGaAlAs.

Figure a) shows the 633 nm refractive index of InG-aAsP and InGaAlAs in the full composition range at three relevant growth temperatures T1

AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.



Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
Live Event