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Wolfspeed launches first module from APEI Arkansas plant

All-SiC half bridge and gate driver combination achieves efficiencies of over 98 percent

Wolfspeed, a supplier of SiC power products, has introduced the first fully qualified commercial power module from its Fayetteville, Arkansas, US  location.

The high-performance 62mm module is said to represent a new generation of all-SiC power modules that enable higher efficiency and power density for high current power electronics, such as: converters/inverters, motor drives, industrial electronics, and high performance electric vehicle systems.

According to the company, the new module allows systems designers to realise lighter weight systems that are up to 67 percent smaller by achieving efficiencies of over 98 percent and improvements in power density of up to ten times compared to systems built with silicon-based technologies.

"Wolfspeed's launch of this fully-qualified, next-generation SiC power module represents the culmination of an engineering development program that began with the company's early SiC MOSFET module designs," explained John Palmour, Wolfspeed's chief technology officer.

"Our 2015 acquisition of Arkansas Power Electronics International (APEI) enabled our team to deliver this advanced power module design on an aggressive timeline by combining leading-edge SiC device technology with the industry's most advanced wide bandgap packaging innovation. The resulting module is the first of many products that promise an accelerated disruption of the power electronics market."

The superior thermal characteristics of SiC devices, along with the packaging design and materials, enable the module to operate at 175degC. In addition, the module design has a 66 percent reduction in module inductance to 5.5nH, compared to competitive power products at 15nH. This reduction in module inductance enables faster switching speeds, higher frequency operation, and ultra-low losses.

Available as part number CAS325M12HM2, the module is configured in a half-bridge topology comprised of seven 1.2kV 25mΩ C2M SiC MOSFETs and six 1.2kV 50A Z-Rec Schottky diodes.

The companion gate driver (CGD15HB62LP) is specifically designed for integration with the module to fit within the 62mm mounting footprint. An engineering evaluation kit that includes both the module and the gate driver is also available.

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