Loading...
News Article

Wolfspeed launches first module from APEI Arkansas plant

All-SiC half bridge and gate driver combination achieves efficiencies of over 98 percent

Wolfspeed, a supplier of SiC power products, has introduced the first fully qualified commercial power module from its Fayetteville, Arkansas, US  location.

The high-performance 62mm module is said to represent a new generation of all-SiC power modules that enable higher efficiency and power density for high current power electronics, such as: converters/inverters, motor drives, industrial electronics, and high performance electric vehicle systems.

According to the company, the new module allows systems designers to realise lighter weight systems that are up to 67 percent smaller by achieving efficiencies of over 98 percent and improvements in power density of up to ten times compared to systems built with silicon-based technologies.

"Wolfspeed's launch of this fully-qualified, next-generation SiC power module represents the culmination of an engineering development program that began with the company's early SiC MOSFET module designs," explained John Palmour, Wolfspeed's chief technology officer.

"Our 2015 acquisition of Arkansas Power Electronics International (APEI) enabled our team to deliver this advanced power module design on an aggressive timeline by combining leading-edge SiC device technology with the industry's most advanced wide bandgap packaging innovation. The resulting module is the first of many products that promise an accelerated disruption of the power electronics market."

The superior thermal characteristics of SiC devices, along with the packaging design and materials, enable the module to operate at 175degC. In addition, the module design has a 66 percent reduction in module inductance to 5.5nH, compared to competitive power products at 15nH. This reduction in module inductance enables faster switching speeds, higher frequency operation, and ultra-low losses.

Available as part number CAS325M12HM2, the module is configured in a half-bridge topology comprised of seven 1.2kV 25mΩ C2M SiC MOSFETs and six 1.2kV 50A Z-Rec Schottky diodes.

The companion gate driver (CGD15HB62LP) is specifically designed for integration with the module to fit within the 62mm mounting footprint. An engineering evaluation kit that includes both the module and the gate driver is also available.

Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: