Toshiba unveils improved SiC Schottky Diodes
Toshiba Electronics Europe has unveiled a new series of Schottky barrier diodes (SBDs) based on the company's second generation SiC semiconductor technology. These SBDs are said to deliver current densities up to 50 percent higher than first generation devices and can handle significantly higher forward surge currents.
With its second generation SiC process, Toshiba says it has been able to reduce die thickness to develop SBDs with current densities around one and a half times (1.5x) higher than first generation devices. In addition, the second generation SiC SBDs will offer higher non-repetitive forward surge current (IFSM) ratings.
The first products in the second-generation line-up will be 650V devices with current ratings of 4A (TRS4E65F), 6A (TRS6E65F), 8A (TRS8E65F), and 10A (TRS10E65F) in TO-220 2-pin and TO-220 isolated 2-pin packages named TRS..A65F.
These diodes will be suitable for high-speed switching power conversion designs including power factor correction (PFC) schemes, photovoltaic inverters and uninterruptible power supplies (UPS). Toshiba's SiC SBDs can also be used to improve the efficiency of switching power supplies through the replacement of conventional silicon diodes.
