Loading...
News Article

TMD to exhibit latest GaN-based module at IMS 2016

2 to 6GHz range module offers output power of 150W and adjustable 55dB gain

At this year's International Microwave Symposium (IMS 2016) in San Francisco, USA (22-27 May 2016), UK microwave specialist TMD Technologies will be giving daily live demonstrations of its new GaN-based solid state PTS6900 microwave power module.

Optimised for EW/ECM systems, the solid state PTS6900 employs the latest 0.25 µm GaN MMIC technology to provide high performance over the 2 to 6 GHz range. This ITAR-free MPM offers an output power of 150W and adjustable 55dB gain. It also has instant start up, fast mute time, and predicted over 30,000 hours MTBF for an airborne uninhabited fighter environment, according to the company.

Said Andy Crawford, head of after sales, TMD UK: "Visitors to our stand at IMS 2016 will now be able to see at first hand the exceptional performance of the new module. We achieve this by setting up the PTS6900 to operate into a dummy load, with the resultant output power shown on a display."

Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: