STMicroelectronics unveils advanced automotive SiC Devices
STMicroelectronics has announced advanced high-efficiency SiC power semiconductors for hybrid and electric vehicles (EVs) with a timetable for qualification to the automotive quality standard AEC-Q101.
In EVs and hybrids, where better electrical efficiency means greater mileage, ST's latest SiC technology enables car makers to create vehicles that travel further, recharge faster, and fit better into owners' lives, according to the company.
ST is among the first companies to present new-generation rectifiers and MOSFETs for high-voltage power modules and discrete solutions addressing all the vehicle's main electrical blocks. These include the traction inverter, on-board battery charger, and auxiliary DC-DC converter.
"Major carmakers and automotive Tier-1s are now committing to SiC technology for future product development to leverage its higher aggregate efficiency compared to standard silicon in a wide range of operating scenarios," said Mario Aleo, group VP and general manager, power transistor division, STMicroelectronics. "Our SiC devices have demonstrated superior performance and reached an advanced stage of qualification as we support customers preparing to launch new products in the 2017 timeframe."
ST has been among the first companies to produce SiC high-voltage MOSFETs, with its first 1200V SiC MOSFET introduced back in 2014, achieving industry- 200degC rating for more efficient and simplified designs.
The company is currently fabricating SiC MOSFETs and diodes on 4-inch wafers and will be scaling-up production to 6-inch wafers by the end of 2016.
It has already qualified its 650V SiC diodes to AEC-Q101, and will complete qualification of the latest 650V SiC MOSFETs and 1200V SiC diodes in early 2017. The qualification of the new-generation 1200V SiC MOSFETs will be completed by the end of 2017.
The STPSC20065WY 650V SiC diode is in full production now in DO-247. The range also includes lower current ratings and smaller form-factor TO-220 package options. The STPSC10H12D 1200V SiC diode is sampling now to lead customers in the TO-220AC package and goes to production this month, with volume production of the automotive-grade version planned for Q4 2016. Multiple current ratings from 6A to 20A and packaging options will also be available.
The SCTW100N65G2AG 650V SiC MOSFET is sampling now to lead customers in the HiP247 package. It will ramp up in volumes in H1 2017. To enable more compact designs, a 650V SiC MOSFET in the surface-mount H2PAK will also be qualified to AEC-Q101 in H1 2017.
According to the company, using the 650V SCTW100N65G2AG SiC MOSFET in the EV/HEV main inverter (typical frequencies up to 20kHz) increases the efficiency compared with an equivalent IGBT solution by up to 3 percent. The SiC MOSFET reduces power losses in the inverter (up to 80 percent lower at light/medium load), enabling designers to use higher switching frequencies for more compact designs. Additionally, a SiC-based solution offers highly robust intrinsic-body diodes, eliminating the need for the freewheeling diodes necessary with IGBTs, further saving cost, size, and weight.
In other EV/HEV applications like the OBC (On-Board Charger) and DC-DC Converter, the inherently faster switching performance of SiC, compared with standard silicon devices, allows much higher switching frequencies, thus reducing the size of passive components. Furthermore, the SiC MOSFET increases design flexibility as it can be used in diverse topologies.
