Ampleon Launches Second Gen GaN RF Transistor Family
Complements LDMOS portfolio with high-efficiency and wideband solutions for mobile broadband
Ampleon, the recently created spin-off from NXP Semiconductors, has announced its second generation of 50V 0.5Âµm GaN on SiC RF power transistors, dedicated for mobile broadband applications.
Providing a 5 percent improvement in power efficiency compared to LDMOS-based devices, and enabling high-power multiband applications, this GaN family also offers a size reduction in the order of 30 to 50 percent, when compared to similar LDMOS transistors, according to Ampleon.
The new portfolio will include transistors with 15 to 600W of peak power for all major cellular bands between 1.8 and 3.8GHz.
The CLF2H27LS-140 is a single-ended transistor providing 140W of peak power in band 41. Other devices currently sampling include the CLF2H1822LS-160 and CLF2H1822LS-220 suitable for 1.8 to 2.2GHz multiband applications, and the CLF2H38LS-140 and CLF2H38LS-40 (driver) for 3.4 to 3.8GHz applications with 140 and 40W outputs at P3dB.
The family is suitable for RF PA designers developing high efficiency or multiband Doherty power amplifiers
AngelTech Live III: Join us on 12 April 2021!
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Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
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Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
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