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Ampleon launches second gen GaN RF transistor family

Complements LDMOS portfolio with high-efficiency and wideband solutions for mobile broadband

Ampleon, the recently created spin-off from NXP Semiconductors, has announced its second generation of 50V 0.5µm GaN on SiC RF power transistors, dedicated for mobile broadband applications.

Providing a 5 percent improvement in power efficiency compared to LDMOS-based devices, and enabling high-power multiband applications, this GaN family also offers a size reduction in the order of 30 to 50 percent, when compared to similar LDMOS transistors, according to Ampleon.

The new portfolio will include transistors with 15 to 600W of peak power for all major cellular bands between 1.8 and 3.8GHz.

The CLF2H27LS-140 is a single-ended transistor providing 140W of peak power in band 41. Other devices currently sampling include the CLF2H1822LS-160 and CLF2H1822LS-220 suitable for 1.8 to 2.2GHz multiband applications, and the CLF2H38LS-140 and CLF2H38LS-40 (driver) for 3.4 to 3.8GHz applications with 140 and 40W outputs at P3dB.

The family is suitable for RF PA designers developing high efficiency or multiband Doherty power amplifiers 

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