Loading...
News Article

Richardson and Global Power Sign Franchise Agreement

Technical sales team to promote SiC products as market demand expands 

Richardson Electronics has signed a new franchise agreement with Global Power Technologies Group, a manufacturer of low-cost, SiC semiconductors for the commercial power market.

The agreement aligns with Global Power Technologies Group's efforts to identify new opportunities using SiC technology, as market demand continues to expand for power electronics and green energy technologies. Richardson Electronics has this extensive portfolio of components in stock and ready for distribution.  

Global Power Technologies Group is a portfolio company of the Global Opportunities Fund (GOF), which is a venture fund focused on the application of wide-bandgap materials technology for the development of high-frequency, high-temperature and efficient power semiconductor devices.

Richardson Electronics is a global channel partner for world-class electron devices, power electronics, and RF and microwave components.

"We are pleased to align with a key innovator of SiC discrete power devices and SiC-based power modules and subsystems for the electric vehicle/hybrid electric vehicle, server, solar inverter, lighting, and power industries," said Greg Peloquin, executive VP of Richardson Electronics' Power & Microwave Technologies group. "Global Power Technologies Group's focus on highly efficient and compact products with high integration and performance at a low cost results in game-changing power electronics for our customers."

"Richardson Electronics performs a unique service to the power semiconductor industry and is an ideal fit, with a highly technical sales force that concentrates on achieving design-wins," stated Michael Digangi, executive VP and chief business development officer of Global Power Technologies Group.

Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: