Qorvo GaN Transistor Passes Environmental Tests
Qorvo has announced that its 15W GaN-on-SiC wideband input-matched transistor has completed stringent environmental testing, demonstrating its reliability for use in defence and emergency response communications equipment.
Roger Hall, general manager of Qorvo's Defence & Aerospace Products business unit, said: "Qorvo has experience applying GaN technology to handheld communications equipment, like wideband handheld radios for first responders, with products that must operate reliably in challenging environmental conditions. Qorvo's QPD1000 recently passed JEDEC's JESD22- A110D Highly Accelerated Temperature/Humidity Stress Test (HAST), proving its reliability in harsh environmental conditions, including severe temperature, humidity and bias."
HAST measures a device at 130degC, 85 percent relative humidity and high atmospheric pressure for a minimum of 96 hours. Additional testing is ongoing, demonstrating the QDP1000's ability to exceed the industry standard test.
The QPD1000 wideband input-matched GaN transistor is offered in a surface-mount plastic DFN package and operates at 30 to 1215MHz. With an integrated wideband input-matching network, the QPD1000 enables wideband gain and power performance along with high efficiency, according to the company.
The output can be matched on the board to optimise power and efficiency for any region within the band. Qorvo's QDP1000 can be used in continuous wave and pulsed signals for defence and public safety communications applications.
Qorvo's GaN products, including a newly launched family of 50V GaN transistors, will be exhibited at the IEEE International Microwave Symposium (IMS), May 22-27 in San Francisco, California.
