Microsemi Shows GaN products at IMS 2016
Microsemi will feature 15 new products from its RF, millimeter wave integrated circuits (ICs), monolithic microwave integrated circuits (MMICs), ultra-low power sub-GHz transceivers and high performance WLAN monolithic radio frequency integrated circuits (RFICs) portfolio at the 2016 IEEE MTT-S International Microwave Symposium (IMS2016) and Exhibition held at the Moscone Center in San Francisco, California May 22-27, 2016.
These include Microsemi's expanding family of RF power transistors based on GaN HEMT on SiC technology includes six new L-band RF power transistors and drivers rated between 120W and 750W.
The new 1214GN-750V, 1214GN-120E/EL/EP, 1011GN-125E/EL/EP, 1011GN-250E/EL/EP, 1416GN-600V, and 1416GN-120E/EL/EP RF power transistors and drivers are said to deliver outstanding size, weight, power and efficiency performance in a wide range of radar, avionics and communications applications with compact packaging options.
