Intersil Extends Radiation Tolerant Portfolio with GaN
Intersil, a provider of power management and analogue chips, has announced plans to extend its radiation tolerant portfolio to include GaN power conversion ICs for satellites and other harsh environment applications.
Intersil will couple its radiation hardened FET drivers with GaN FETs to deliver performance that leapfrogs existing products that rely on traditional high-rel FET technologies. GaN provides better conductivity and switching characteristics that enable several system benefits, including a reduction in system power losses.
"Intersil has decades of experience developing state-of-the-art radiation tolerant devices and a long heritage supplying space flight applications," said Philip Chesley, senior vice president of Precision Products at Intersil.
"When combined with the demonstrated ability of GaN devices to operate reliably under harsh environmental conditions, we will provide customers with a far superior alternative to existing FET technology."
Intersil is collaborating with Efficient Power Conversion Corporation (EPC), the first to introduce enhancement-mode eGaN FETs as power MOSFET replacements. Intersil's new products based on the eGaN technology will be sampling this summer.
