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NXP Introduces New GaN Transistors For Cellular Basestations

Four new RF power transistors cover cellular bands from 1805 to 3600MHz

NXP Semiconductors has expanded its portfolio of 48V GaN RF power transistors optimised for Doherty power amplifiers for use in current and next-generation cellular base stations. The four new transistors collectively cover cellular bands from 1805 to 3600MHz, addressing the needs of wireless carriers for superior performance at higher frequencies.

With the wireless spectrum shortage, wireless carriers are exploring higher frequencies to accommodate the exponential annual increases in traffic. These networks require RF power transistors and amplifiers that deliver higher performance over wider signal bandwidths, as well as higher efficiency and ruggedness, higher output power and smaller footprints.

The four new NXP GaN transistors are designed to meet these challenges. The transistors have high efficiency and gain, and are extremely rugged, with the ability to deliver their rated performance with an impedance mismatch (VSWR) greater than 10:1. These transistors, designed for use in Doherty power amplifiers, are optimised for seamless integration with digital predistortion linearisation systems.

The new products include:

A2G22S251-01S: Ultra wideband symmetrical Doherty two device solution covering 1805 to 2170MHz (365MHz bandwidth). In a symmetric Doherty, it delivers an average RF output power of 71W (450W peak), gain of 16.5dB, and drain efficiency of 46 percent in concurrent multiband operation at 8dB back-off configured. The part is housed in a NI-400S-2S air-cavity ceramic package.

A2G26H281-04S: NXP's first in-package Doherty transistor covering 2496 to 2690MHz, with average RF output power of 50W (288W peak), gain of 15.3dB, and drain efficiency of 57 percent configured in a NI-780S-4L air-cavity ceramic package.

A2G35S160-01S and A2G35S200-01S: Two-transistor Doherty amplifier solution covering 3400 to 3600MHz with 53W average RF output power (331W peak), gain of 13.8dB, and drain efficiency of 46percent. Each of these transistors is housed in a NI-400S-2S air-cavity ceramic package.

"Cellular customers are actively pursuing GaN technology especially in higher frequency bands. Given its leadership in the cellular base station market, NXP is committed to being a dominant source of top-quality GaN products," said Paul Hart, executive vice president and general manager of NXP's RF power business unit. "Our new transistors fully harness the inherent strengths of GaN enabling broad bandwidth, efficient and compact solutions."



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